Introduction
On October 15th 2019, Powersys organizes the worldwide meeting of SaberRD and SaberES Designer users, partners and developers. This FREE event will take place in Strasbourg at
the Sofitel Strasbourg Grand Ile.
The User Conference will be followed by a 2-day tutorial, Next-Generation Power Electronics Modeling with SaberRD, run by Dr. Andrew Lemmon and Dr. Raghav Khanna at the same place.
Why attending
Discuss with Saber Solutions users, share your experience and exchange with Saber Solutions developers.
Discover Saber Solutions roadmap and upcoming developments as well as express your software development needs.
Discover SaberRD & SaberES Designer user case study presentations providing insigths and real-world experiences.
CALL FOR SPEAKERS
Among the topics covered this year
- Switching power supplies,
- Aircraft power networks,
- Automotive electrical systems,
- Hybrid electric vehicle systems.
Important deadlines
- Expression of interest and submission of title – July 16th, 2019
- Submission of short abstract & title: August 7th, 2019
- Confirmation of acceptance – August 23rd, 2019
- Submission of the presentation file: September 26th, 2019
The final presentations will be presented using the powerpoint format and written in English.
AGENDA
FREE USER CONFERENCE
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October 15th
USER CONFERENCE
WORKSHOP
from 1600€ to 2300€-
October 16th
TUTORIAL DAY 1
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- 8.30 am Registration
- 9.00 am Introduction to Wide Bandgap Semiconductors: Game-changers for Next Generation Power Electronics
This session will provide a high-level overview discussing the importance of Wide Bandgap Semiconductors (WBGs), specifically gallium nitride (GaN), and Silicon Carbide (SiC). This talk will focus on the application of WBG technology to future power electronic systems, such as, but not limited to, renewable energy, electric passenger vehicles, electric aircraft, electric ships, and low power consumer electronics. The ability of GaN and SiC to enable higher efficiencies and increased power density in the aforementioned systems will be emphasized. - 11.00 am Coffee break
- 11.30 am Design and Adoption Challenges for Integration of WBGs
Despite many advantages of WBG technology, there are some remaining challenges that hinder its widespread adoption. These challenges exist both at the device and the circuit (integration) level. This session will not only present these challenges for WBGs but will also include a detailed discussion of techniques to mitigate these challenges, so that GaN and SiC can achieve their full value proposition. Lab sessions will be used to supplement the presented material. - 1.30 pm Lunch break
- 2.30 pm Introduction to Power MOSFET and Power IGBT tools in SaberRD (Part 1)
In this session, the trainee will learn what important device characteristics must be modeled for power electronic applications. The datasheet of a commercially available Silicon (Si) IGBT and a Si MOSFET will be used to teach the trainee how to use the power modeling tools in SaberRD. - 3.30 pm Coffee break
- 4.00 pm Introduction to Power MOSFET and Power IGBT tools in SaberRD (Part 2)
- 8.30 am Registration
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October 17th
TUTORIAL DAY 2
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- 9.00 am Designing and Implementing Application Circuits in SaberRD
In this session, the trainee will be familiarized with several application circuits that are often used to evaluate the performance of WBGs. A commonly used circuit for transient analysis, known as a “Double Pulse Test” (DPT) circuit will first be discussed. Next, a simple switch-mode converter (boost topology) will be discussed as a platform for demonstrating the capabilities of SaberRD. Lab sessions for both circuits will also be delivered. The previously developed Si IGBT and Si MOSFET models will be used in these simulation exercises. - 11.00 am Coffee break
- 11.30 am Using SaberRD to Model WBG Devices
This session will build off the previous session by investigating the differences in performance and behavior that are realized with the introduction of WBG devices. For this session, the trainees will be provided with pre-developed models for two devices: a GaN HFET and a SiC MOSFET. One important outcome of this session will be a comparison of the observed performance of these two WBG devices, in comparison to the traditional devices demonstrated in the previous session. These two comparisons will take advantage of the application circuits developed in the previous session in order to reduce the time required for completing this analysis. - 1.30 pm Lunch break
- 2.30 pm SaberRD Case Study in EV Application (Part 1)
In this session, a pre-built power converter circuit representative of an EV charger application will be utilized to further demonstrate the capabilities of SaberRD. This circuit will be evaluated both with traditional (Si) semiconductors and with SiC MOSFETs. The behavior of this system will be evaluated across a range of operating conditions, and a series of metrics will be used to evaluate its performance, such as efficiency, total harmonic distortion (THD), energy conversion ratio, etc. - 3.30 pm Coffee break
- 4.00 pm SaberRD Case Study in EV Application (Part 2)
- 9.00 am Designing and Implementing Application Circuits in SaberRD
VENUE
SOFITEL STRASBOURG GRANDE ILE
4 Place Saint-Pierre-Le-Jeune
67000 STRASBOURG
FRANCE
SPEAKERS
Dr. Raghav Khanna
Raghav Khanna received the B.S. degree, M.S. degree, and Ph.D. degree in electrical engineering from the University of Pittsburgh, Pittsburgh, PA, USA in 2007, 2010, and 2014, respectively. Dr. Khanna has worked for several industries including Lockheed Martin (Philadelphia, PA), PPG Industries (Pittsburgh, PA) and HRL Laboratories (Malibu CA). At HRL, he was directly involved with the development of GaN based battery chargers for electric vehicles. In 2015, he joined the electrical engineering and computer science department at The University of Toledo (UT) as an assistant professor. His research interests are in modeling and simulation of wide bandgap semiconductors for applications in next generation power electronics, including; renewable energy, electric vehicles, aerospace and maritime systems, and in low power consumer electronics. He is also conducting extensive research on maximum power point tracking in photovoltaic systems and in renewable energy integration. He recently received grants from the Office of Naval Research, U.S. Department of Energy, and NASA Jet Propulsion Laboratory to further develop his research activities. Dr. Khanna serves on the technical program committee for flagship international conferences in power conversion, such as the Applied Power Electronics Conference (APEC). At APEC 2013, Dr. Khanna won a Best Presentation Award for his presentation on the transient performance of silicon carbide transistors. He is a member of IEEE, Power Electronics Society and Electron Devices Society.
Dr. Andrew Lemmon
Andy Lemmon received the B.S. degree in electrical engineering from Christian Brothers University, Memphis, TN, in 2000; the M.S. degree in electrical and computer engineering from The University of Memphis in 2009; and the Ph.D. degree in electrical engineering from Mississippi State University, Starkville, MS, in 2013. Dr. Lemmon has 19 years of engineering experience, including 10 years as a full-time practicing engineer in industry, and 9 years as a full-time researcher in academia. Since 2013, he has served as an Assistant Professor in the department of electrical and computer engineering at The University of Alabama in Tuscaloosa. Dr. Lemmon’s research group focuses on the design of power electronics applications for wide band-gap (WBG) semiconductors; simulation and modeling of power semiconductor devices and applications; analysis of semiconductor packaging parasitics and their impact on the performance of power electronics; and strategies for analyzing and mitigating electromagnetic interference (EMI) in WBG applications. Dr. Lemmon currently leads a research team consisting of graduate students who are pursuing advanced degrees in the area of performance optimization and EMI mitigation for WBG-based power electronics. Dr. Lemmon’s team is supported by research contracts and grants from the Office of Naval Research and the U.S. Department of Energy, along with several commercial sponsors. Dr. Lemmon is a licensed professional engineer and has been awarded four issued patents.
This event is organized by Powersys, SaberRD and SaberES Designer distributor in Europe. For any questions, please contact us at marketing@powersys.fr.
Do you need more information on SaberRD & SaberES Designer? Visit Saber Solutions website.